Thermo- and galvanomagnetic investigations of semiconductors at high pressure up to 30 GPa

Sergey V. Ovsyannikov; Vladimir V. Shchennikov

doi:10.1117/12.475655

12 July 2002 Thermo- and galvanomagnetic investigations of semiconductors at high pressure up to 30 GPa

Sergey V. Ovsyannikov, Vladimir V. Shchennikov

Proceedings Volume 4692, Design, Process Integration, and Characterization for Microelectronics; (2002) https://doi.org/10.1117/12.475655
Event: Design, Process Integration, and Characterization for Microelectronics, 2002, Santa Clara, CA, United States

Abstract

At ultrahigh pressure the thermoelectric power, magneto resistance, and thermo magnetic effects were measured for Te, Se and S samples in the vicinity of semiconductor-metal phase boundary. The significant longitudinal and transverse Nernst-Ettingshausen effects observed for Te and Se allowed to estimate the scattering parameter for charge carriers. The increase of holes mobility obtained from longitudinal and transverse Nernst-Ettinghausen effects being consistent with growth of magneto resistance under pressure. These experiments gave configuration to decreasing of effective mass of holes at closing of direct semiconductor gap. From thermoelectric power measurements up to 40 GPa Sulfur was found to be a narrow-gap semiconductor with large negative pressure coefficient of electron gap. Negative magneto resistance effect observed in S suggests very low mobility of holes, that is in well agreement with retaining molecular type of crystal structure. Thermo magnetic effects, like galvanomagnetic ones, seems to be perspective for using in micro-device technology.

Citation Download Citation

Sergey V. Ovsyannikov and Vladimir V. Shchennikov "Thermo- and galvanomagnetic investigations of semiconductors at high pressure up to 30 GPa", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); https://doi.org/10.1117/12.475655

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