Design of a CMOS BDJ detector array for fluorescence imaging application

Gerard Sou; Guo Neng Lu

doi:10.1117/12.462825

19 April 2002 Design of a CMOS BDJ detector array for fluorescence imaging application

Gerard Sou, Guo Neng Lu

Proceedings Volume 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002; (2002) https://doi.org/10.1117/12.462825
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002, Cannes-Mandelieu, France

Abstract

The Buried Double Junction (BDJ) detector [1], which can be used either as a wavelength-sensitive device and as a photodetector, can be implemented in standard CMOS IC technologies, with no requirement for additional post process step. It has recently been applied to fluorescence detection [2]. The wavelength-sensitive operation of the CMOS BDJ detector is based on the wavelength dependence of the Silicon absorption coefficient a(X) in the visible range. An absorption length defined as 1(X) varies monotonically, from about 0. 1pm to several micrometers when the wavelength of an incident monochromatic light changes from 0.4 jim to 0.8 jim.

Citation Download Citation

Gerard Sou and Guo Neng Lu "Design of a CMOS BDJ detector array for fluorescence imaging application", Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); https://doi.org/10.1117/12.462825

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