Paper
16 August 2002 Mask CD uniformity impact during incoming quality control
Author Affiliations +
Proceedings Volume 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2002) https://doi.org/10.1117/12.479361
Event: 18th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, 2002, Munich-Unterhaching, Germany
Abstract
The paper presents the use of the Linewidth Bias Monitor (LBM), the critical dimension (CD) uniformity mapping option of the ARIS 2li die-to-database mask inspection system, for incoming quality control (IQC) in the wafer fab. LBM is qualified for this purposes by comparing it's quantitative results with CD measurements. Masks, provided by different commercial vendors, are evaluated based on the LBM maps obtained during mask inspection. Mean-to-target and 3-sigma values are evaluated and compared.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ernesto Villa, Emanuele Baracchi, Anja Rosenbusch, Michael M. Har-zvi, and Gidon Gottlib "Mask CD uniformity impact during incoming quality control", Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); https://doi.org/10.1117/12.479361
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KEYWORDS
Photomasks

Critical dimension metrology

Semiconducting wafers

Inspection

Reticles

Control systems

Metrology

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