InAs photodetectors for high-speed detection of infrared radiation

Jozef Piotrowski; Zbigniew Orman; Janusz Kaniewski

doi:10.1117/12.474368

17 February 2003 InAs photodetectors for high-speed detection of infrared radiation

Jozef Piotrowski, Zbigniew Orman, Janusz Kaniewski

Proceedings Volume 4833, Applications of Photonic Technology 5; (2003) https://doi.org/10.1117/12.474368
Event: Applications of Photonic Technology 5, 2002, Quebec City, Canada

Abstract

We report here uncooled and thermoelectrically cooled InAs photodetectors designed for fast and sensitive detection of IR radiation. This has been achieved by the use of a complex architecture of the device that ensures reduced thermal generation of charge carriers, fast diffusion and drift transport of photogenerated carriers across the absorber region, a low series resistance, and a low capacitance. In addition, the device are monolithically immersed to GaAs hyperhemispherical microlenses that reduces capacitance by more than two orders of magnitude in comparison to non-immersed devices of the same optical area. As a result, the optimized devices are characterized by picosecond response time.

Citation Download Citation

Jozef Piotrowski, Zbigniew Orman, and Janusz Kaniewski "InAs photodetectors for high-speed detection of infrared radiation", Proc. SPIE 4833, Applications of Photonic Technology 5, (17 February 2003); https://doi.org/10.1117/12.474368

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