Effects of alternating aperture PSM design on image imbalance for 65-nm technology

Armen Kroyan; Hua-Yu Liu

doi:10.1117/12.467852

27 December 2002 Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology

Armen Kroyan, Hua-Yu Liu

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.467852
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

Over recent years, there has been a number of publications generally describing and characterizing the image imbalance phenomenon in phase shifting masks. In this work, we concentrate on the evaluation of various alternating aperture PSM design parameters and their impact on image imbalance in the context of the 65nm technology node. The study is based on rigorous electro-magnetic field (EMF) simulation of light scattering in 3D mask topographies using EM-Suite software from Panoramic Technology. Among evaluated design parameters are: Cr feature size, pattern pitch, shifter width bias, shifter height, and undercut size. Additionally, the correlation between the mask parameters and image imbalance is examined as a function of optical settings such as NA, sigma, defocus and the image threshold level.

Citation Download Citation

Armen Kroyan and Hua-Yu Liu "Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467852

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