300-W XeCl excimer laser annealing techniques in low-temperature polysilicon technology

Burkhard Fechner; Ulrich Rebhan; Rustem Osmanov; Mark Schiwek; Hans-Juergen Kahlert

doi:10.1117/12.481801

5 September 2002 300-W XeCl excimer laser annealing techniques in low-temperature polysilicon technology

Burkhard Fechner, Ulrich Rebhan, Rustem Osmanov, Mark Schiwek, Hans-Juergen Kahlert

Proceedings Volume 4914, High-Power Lasers and Applications II; (2002) https://doi.org/10.1117/12.481801
Event: Photonics Asia, 2002, Shanghai, China

Abstract

The most recent development in industrial fabrication processes of low temperature poly-silicon by means of excimer laser and optics system is presented: . The recently developed high performance excimer laser, which delivers the highest output power currently commercially available in combination with two different beam shaping methods, the commonly known ELA-technique and the new SLS-technique for enhanced Field effect mobiliiy in the LTPS, is demonstrated.

Citation Download Citation

Burkhard Fechner, Ulrich Rebhan, Rustem Osmanov, Mark Schiwek, and Hans-Juergen Kahlert "300-W XeCl excimer laser annealing techniques in low-temperature polysilicon technology", Proc. SPIE 4914, High-Power Lasers and Applications II, (5 September 2002); https://doi.org/10.1117/12.481801

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