Semiconductor multiple quantum well photorefractive devices for vibration measurement

Tsutomu Shimura; Satoshi Iwamoto; Sayoko Taketomi; Yasuhiko Arakawa; Kazuo Kuroda

doi:10.1117/12.465749

20 September 2002 Semiconductor multiple quantum-well photorefractive devices for vibration measurement

Tsutomu Shimura, Satoshi Iwamoto, Sayoko Taketomi, Yasuhiko Arakawa, Kazuo Kuroda

Proceedings Volume 4919, Advanced Materials and Devices for Sensing and Imaging; (2002) https://doi.org/10.1117/12.465749
Event: Photonics Asia, 2002, Shanghai, China

Abstract

Some characteristics of photorefractive semiconductor multiple quantum well devices are discussed from the point of view of a material for the vibration measurement system using two-wave mixing. Device structure and device fabrication is explained, and some results of the measurements on the characteristics of the device are presented and discussed. Finally, the system of vibration measurements is described and some results are discussed. The smallest detectable amplitude of the vibration is 0.4 nm and the signal is linear up to 25 nm. Cut off frequency is 34 kHz at the incident intensity of 90mW/cm².

Citation Download Citation

Tsutomu Shimura, Satoshi Iwamoto, Sayoko Taketomi, Yasuhiko Arakawa, and Kazuo Kuroda "Semiconductor multiple quantum-well photorefractive devices for vibration measurement", Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); https://doi.org/10.1117/12.465749

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