High-mobility InAs/AlSb heterostructures for spintronics applications

Yuri G. Sadofyev; Y. Cao; S. Chaparro; A. Ramamoorthy; B. Naser; J. P. Bird; S. R. Johnson; Y.-H. Zhang

doi:10.1117/12.510557

11 June 2003 High-mobility InAs/AlSb heterostructures for spintronics applications

Yuri G. Sadofyev, Y. Cao, S. Chaparro, A. Ramamoorthy, B. Naser, J. P. Bird, S. R. Johnson, Y.-H. Zhang

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.510557
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical AlSb and Al_0.8Ga_0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.

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Yuri G. Sadofyev, Y. Cao, S. Chaparro, A. Ramamoorthy, B. Naser, J. P. Bird, S. R. Johnson, and Y.-H. Zhang "High-mobility InAs/AlSb heterostructures for spintronics applications", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.510557

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