Alexander M. Mintairov,1,2 P. A, Blagnov,1 James L. Merz,2 Victor M. Ustinov,1 A. S. Vlasov,1 Alexey R. Kovsh,1,3 Jyh-Shyang Wang,3 Li-Chung Wei,3 Jim Y. Chi3
1A.F. Ioffe Physico-Technical Institute (Russia) 2Univ. of Notre Dame (United States) 3Industrial Technology Research Institute (Taiwan)
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
A series of narrow emission lines (halfwidth 0.5 - 2 meV) corresponding to quantum-dot-like compositional fluctuations have been observed in low temperature near-field photoluminescence spectra of GaAsN and InGaAsN alloys. The estimation of the size, density, and nitrogen excess of individual compositional fluctuations (clusters) using scanning near-field magneto-spectroscopy reveals phase-separation effects in the distribution of nitrogen. We found a strong effect of In on the exciton g-factor in InGaAsN alloys.
Alexander M. Mintairov,P. A, Blagnov,James L. Merz,Victor M. Ustinov,A. S. Vlasov,Alexey R. Kovsh,Jyh-Shyang Wang,Li-Chung Wei, andJim Y. Chi
"Quantum-dot-like composition fluctuations in near-field magneto-photoluminescence spectra of InGaAsN alloys", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511847
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Alexander M. Mintairov, P. A, Blagnov, James L. Merz, Victor M. Ustinov, A. S. Vlasov, Alexey R. Kovsh, Jyh-Shyang Wang, Li-Chung Wei, Jim Y. Chi, "Quanum-dot-like composition fluctuations in near-field magneto-photoluminescence spectra of InGaAsN alloys," Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511847