Spin memory in the n-doped GaAs/AlGaAs quantum wells

S. Yu. Verbin; Yu. P. Efimov; V. M. Petrov; I. V. Ignatiev; Yu. K. Dolgikh; S. A. Eliseev; I. Ya Gerlovin; V. V. Ovsyankin; Yasuaki Masumoto

doi:10.1117/12.514466

11 June 2003 Spin memory in the n-doped GaAs/AlGaAs quantum wells

S. Yu. Verbin, Yu. P. Efimov, V. M. Petrov, I. V. Ignatiev, Yu. K. Dolgikh, S. A. Eliseev, I. Ya Gerlovin, V. V. Ovsyankin, Yasuaki Masumoto

Author Affiliations +

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514466
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The polarized luminescence spectra and kinetics of the GaAs quantum wells with excess free electrons are studied experimentally. Quantum beats between the exciton and electron spin sublevels, split by a magnetic field, are detected. The dynamics of the degree of polarization is found to contain a long component associated with slow relaxation of electron spins.

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S. Yu. Verbin, Yu. P. Efimov, V. M. Petrov, I. V. Ignatiev, Yu. K. Dolgikh, S. A. Eliseev, I. Ya Gerlovin, V. V. Ovsyankin, and Yasuaki Masumoto "Spin memory in the n-doped GaAs/AlGaAs quantum wells", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514466

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