Photosensitive properties of As-S layers

Alexander V. Stronski; Miroslav Vlcek; A. Sklenar; Sergey A. Kostyukevich

doi:10.1117/12.497287

1 April 2003 Photosensitive properties of As-S layers

Alexander V. Stronski, Miroslav Vlcek, A. Sklenar, Sergey A. Kostyukevich

Proceedings Volume 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (2003) https://doi.org/10.1117/12.497287
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 2003, 2003, Moscow, Russian Federation

Abstract

The present paper is concerned with investigations of photosensitive properties of As-S thin layers. Spectral dependence of the refraction index n of variously treated (virgin, exposed, annealed) samples was estimated from optical transmission in the spectral region 400 - 2500 nm. The n energy dependence of variously treated samples was fitted by the Wemple-DiDomenico dispersion relationship and used to estimate the single-oscillator model parameters. It was found, that exposure, as well as annealing leads to the increase in n values over the all investigated spectral region. Compositional dependencies of single-oscillator model parameter E_d (dispersion energy), optical dielectric constant ε(0) show maximum at stoichiometric composition As₄₀-S₆₀ and, possibly, weak maximum at As_28.6S_71.4 composition. Composition evolution of the intensity of bands in Raman spectra corresponding to the As rich and S rich molecular fragments is in agreement with compositional changes of E_d and optical dielectric constant. Changes of the parameters of the single-oscillator model induced by treatment are discussed on the base of photo- and thermally-induced structural changes and are consistent with topological models and models that claim a degree of chemical ordering. Such photoinduced structural changes provide good etching selectivity of As-S layers in amine based solvents. Surface relief patterns that were fabricated have good surface quality. Diffraction efficiency values of holographic diffraction gratings obtained on the base of As_100-XS_X layers consisted 60 - 70%.

Citation Download Citation

Alexander V. Stronski, Miroslav Vlcek, A. Sklenar, and Sergey A. Kostyukevich "Photosensitive properties of As-S layers", Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); https://doi.org/10.1117/12.497287

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KEYWORDS

Raman spectroscopy

Glasses

Annealing

Chemical species

Dielectrics

Etching

Diffraction gratings

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