Specifications and methodologies for benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node and beyond

Benjamin D. Bunday; Michael Bishop

doi:10.1117/12.483663

2 June 2003 Specifications and methodologies for benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node and beyond

Benjamin D. Bunday, Michael Bishop

Author Affiliations +

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.483663
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

In this work, an extremely flexible and simple dissolution rate monitor (DRM) based on inexpensive, commercially available, PC card spectrometers has been built that can be used quite robustly in both fab and laboratory environments for measuring the dissolution behavior of photoreist films. The hardware required in order to construct such a simple apparatus has been discussed along with various experimental configurations that are appropriate for different measurement tasks. A multiwavelength interferometric data analysis software (MIDAS) has been developed in this work that can robustly perform both single wavelength and multiwavelength DRM data analysis. The multiwavelength DRM and MIDAS software have been found to be very useful in analyzing a variety of resist film dissolution phenomena including monitoring films possessing dissolution rates exceeding 100 nm/s and studying resist film surface inhibition/acceleration. Another useful application has been to measure swelling in the processing of photoresists and other polymer thin films. The basic approaches and algorithms used for thin film thickness and dissolution rate determination in the MIDAS software are discussed in this paper. Results from the use of the MIDAS software in various applications are presented.

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Benjamin D. Bunday and Michael Bishop "Specifications and methodologies for benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node and beyond", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.483663

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