Microstructures of defects causing noise in MOS devices

Daniel M. Fleetwood

doi:10.1117/12.487868

9 May 2003 Microstructures of defects causing noise in MOS devices

Daniel M. Fleetwood

Proceedings Volume 5112, Noise as a Tool for Studying Materials; (2003) https://doi.org/10.1117/12.487868
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States

Abstract

The low-frequency excess (1/f) noise of metal-oxide-semiconductor (MOS) devices has long been known to depend strongly on defects at or near the Si/SiO₂ interface. We discuss several defect microstructures for oxygen-vacancy-related defects that are found via density functional theory to have energy levels consistent with 1/f noise. These include two variations of the so-called E_γ' center, one of which includes a fivefold coordinated, puckered Si atom. A stretched dimer O vacancy defect ( the E_δ') is also found to potentially cause MOS 1/f noise. These defects appear to be sufficient to describe much of the noise in many kinds of nMOS and pMOS transistors. However, pMOS transistors that show latent interface-trap buildup and/or buried channel conduction may present a special challenge for these or otehr noise models. O-vacancy-related and hydrogen-related defects that cause 1/f noise in larger devices will cause other kinds of performance and reliability problems in highly scaled devices, such as random telegraph noise, enhanced tunnel current, stress or radiation induced leakage current, and/or dielectric breakdown.

Citation Download Citation

Daniel M. Fleetwood "Microstructures of defects causing noise in MOS devices", Proc. SPIE 5112, Noise as a Tool for Studying Materials, (9 May 2003); https://doi.org/10.1117/12.487868

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