Computer simulation of the creation of 31P-doped layer in 28Si/30Si/28Si heterostructure by neutron transmutation doping

Yuri V. Trushin; Gennadi V. Mikhailov; Evgeni E. Zhurkin; Vladimir S. Kharlamov; Alexander A. Schmidt; Fedor A. Krusenstern

doi:10.1117/12.517949

10 October 2003 Computer simulation of the creation of ³¹P-doped layer in ²⁸Si/³⁰Si/²⁸Si heterostructure by neutron transmutation doping

Yuri V. Trushin, Gennadi V. Mikhailov, Evgeni E. Zhurkin, Vladimir S. Kharlamov, Alexander A. Schmidt, Fedor A. Krusenstern

Author Affiliations +

Proceedings Volume 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2003) https://doi.org/10.1117/12.517949
Event: Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2002, St. Petersburg, Russian Federation

Abstract

Recently various physical phenomena involving nuclear spins in semiconductors attract much attention. The problem is to produce an array of impurity atoms with nuclear spin I=1/2 in the atom matrix wiht I=0, i.e. to produce a nuclear-spin engineered semiconductor heterostructure. Both the concentration and the spatial distribution of impurity should be controlled. It is supposed that utilization of ³¹P atoms as an impurity in ²⁸Si or ³⁰Si matrix possesses significant advantages. Such a structure could be produced by neutron transmutation doping (NTD) of ²⁸Si/³⁰Si/²⁸Si isotopic heterostructure, according to the nuclear reaction ³⁰Si+n→³¹Si(2.6 hour)→³¹P. Computer simulation of the NTD process provides the conditions necessary to create ²⁸Si/³⁰Si:³¹P/²⁸Si heterostructure with good crystal structure and well-defined distribution of impurity concentration. Simulation was carried out using parallel computing capabilities of workstation cluster of AF Ioffe Physico-Technical Institute of the Russian Academy.

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Yuri V. Trushin, Gennadi V. Mikhailov, Evgeni E. Zhurkin, Vladimir S. Kharlamov, Alexander A. Schmidt, and Fedor A. Krusenstern "Computer simulation of the creation of ³¹P-doped layer in ²⁸Si/³⁰Si/²⁸Si heterostructure by neutron transmutation doping", Proc. SPIE 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (10 October 2003); https://doi.org/10.1117/12.517949

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