Paper
10 October 2003 Peculiarities of the defect formation on deformed Si(111) surface
Vladimir I. Betechtin, Natalya N. Gorobey, Vyacheslav E. Korsukov, Alexander S. Lukyanenko, Barzu A. Obidov
Author Affiliations +
Proceedings Volume 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2003) https://doi.org/10.1117/12.517984
Event: Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2002, St. Petersburg, Russian Federation
Abstract
Experimental results on the relief dynamics on the loaded Si(111) surface obtained by scanning tunneling microscopy, are presented. Two experimental series are considered: for mechanically and chemically polished surface. Despite the difference of the dynamics scenario in two cases, all effects are essentially surface ones, they arise due to mass redistribution along the surface. As a general framework for consideraiotn we propose the minimum energy principle.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir I. Betechtin, Natalya N. Gorobey, Vyacheslav E. Korsukov, Alexander S. Lukyanenko, and Barzu A. Obidov "Peculiarities of the defect formation on deformed Si(111) surface", Proc. SPIE 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (10 October 2003); https://doi.org/10.1117/12.517984
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Cited by 2 scholarly publications.
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KEYWORDS
Surface finishing

Polishing

Scanning tunneling microscopy

Crystals

Semiconductors

Silicon

Fractal analysis

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