Full-chip application for SRAM gate at 100-nm node and beyond using chromeless phase lithography

Ji-Soong Park; Sung-Hyuck Kim; In-Kyun Shin; Sung-Woon Choi; Jung-Min Sohn; Jae-Han Lee; Hye-soo Shin; Thomas L. Laidig; Douglas J. Van Den Broeke; J. Fung Chen

doi:10.1117/12.518014

17 December 2003 Full-chip application for SRAM gate at 100-nm node and beyond using chromeless phase lithography

Ji-Soong Park, Sung-Hyuck Kim, In-Kyun Shin, Sung-Woon Choi, Jung-Min Sohn, Jae-Han Lee, Hye-soo Shin, Thomas L. Laidig, Douglas J. Van Den Broeke, J. Fung Chen

Author Affiliations +

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518014
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

High speed circuit usually requires additional gate scaling regardless of its developed technology node. In this paper, we demonstrate the full-chip-level wafer result for 100nm node SRAM gate and the possibility of future gate scaling. Test reticle is manufactured using chromeless phase lithography(CPL). CPL technology uses a COG that consists of p -phased-etched quartz and chrome shield for various gate CD formation. Critical transistor area is 100% transmission PSM. However, less-critical area should be a chrome for adequate CD control. Because light interference is weakened in phase area according to the separation of paired phase edges increase. The optical performance and manufacturing issues of CPL are evaluated compared to other PSM technologies. Finally, we describe how to optimize the CPL mask using simulation and wafer analysis to obtain the acceptable OCV and DOF margin for volume production.

Citation Download Citation

Ji-Soong Park, Sung-Hyuck Kim, In-Kyun Shin, Sung-Woon Choi, Jung-Min Sohn, Jae-Han Lee, Hye-soo Shin, Thomas L. Laidig, Douglas J. Van Den Broeke, and J. Fung Chen "Full-chip application for SRAM gate at 100-nm node and beyond using chromeless phase lithography", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518014

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available