Comprehensive analysis of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different thickness of setback layers

Shiou-Ying Cheng; Chun-Yuan Chen; Jing-Yuh Chen; Hung-Ming Chuang; Wen-Chau Liu; Wen-Lung Chang; Hsi-Jen Pan; Pao-Chuan Chen

doi:10.1117/12.522286

2 April 2004 Comprehensive analysis of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different thickness of setback layers

Shiou-Ying Cheng, Chun-Yuan Chen, Jing-Yuh Chen, Hung-Ming Chuang, Wen-Chau Liu, Wen-Lung Chang, Hsi-Jen Pan, Pao-Chuan Chen

Author Affiliations +

Proceedings Volume 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III; (2004) https://doi.org/10.1117/12.522286
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

We specifically studied the influence of a setback-layer thickness on the device performances so as to optimize the required value. Theoretical analysis shows that an optimized setback-layer thickness is available to effectively reduce the barrier height while maintain good device performances. In this work, the effects of a setback-layer thickness on the DC and RF performances of an InGaP/GaAs heterojunction bipolar transistor (HBT) are investigated. Based on the theoretical analysis, the optimized setback-layer thickness WSB is about of 10~30Å for analog amplification. On the other hand, for digital saturated logic application, i.e., a small offset voltage with an acceptable current gain, the optimized W_SB could be up to 50 Å. Therefore, this analysis and predication may cause the considerable promise for practical circuit applications.

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Shiou-Ying Cheng, Chun-Yuan Chen, Jing-Yuh Chen, Hung-Ming Chuang, Wen-Chau Liu, Wen-Lung Chang, Hsi-Jen Pan, and Pao-Chuan Chen "Comprehensive analysis of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different thickness of setback layers", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); https://doi.org/10.1117/12.522286

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KEYWORDS

Heterojunctions

Transistors

Analog electronics

Logic

Digital electronics

Electrical engineering

Gallium

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