Xenon Irradiation-Induced Changes In CrSi[sub]2[/sub] Thin Films

X-A. Zhao; T. C. Banwell; M-A. Nicolet

doi:10.1117/12.946477

9 April 1985 Xenon Irradiation-Induced Changes In CrSi₂ Thin Films

X-A. Zhao, T. C. Banwell, M-A. Nicolet

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946477
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

Measurements of electrical resistivity are used to monitor changes in CrSi₂ thin films induced by Xe irradiation over a fluence range of ≈ 10¹⁰ - 10¹⁴ cm^-2. Behavior associated with defect generation and recombination are evident at high fluences. A temperature dependence at low fluences is reported and tentatively identified.

Citation Download Citation

X-A. Zhao, T. C. Banwell, and M-A. Nicolet "Xenon Irradiation-Induced Changes In CrSi₂ Thin Films", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946477

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