High-power single-mode 1330- and 1550-nm VCSELs bonded to silicon substrates

Virginia M. Robbins; Steven D. Lester; David P. Bour; Jeffrey N. Miller; Francoise Mertz

doi:10.1117/12.540323

18 June 2004 High-power single-mode 1330- and 1550-nm VCSELs bonded to silicon substrates

Virginia M. Robbins, Steven D. Lester, David P. Bour, Jeffrey N. Miller, Francoise Mertz

Author Affiliations +

Proceedings Volume 5349, Physics and Simulation of Optoelectronic Devices XII; (2004) https://doi.org/10.1117/12.540323
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We demonstrate novel electrically driven 1330 and 1550 nm VCSELs using conventional InGaAsP active regions. The VCSELs employ two TiO2/SiO2 DBR mirrors and an InAlAs tunnel junction that converts electrons to holes, minimizing free carrier losses in the p-type material. The active layers are transferred onto Si wafers using wafer-scale Pd silicide bonding. We have obtained single-mode room-temperature output powers as high as 2.4mW at 1330nm and 2.7mW at 1550nm. At 80C we have obtained 0.6mW of single-mode power at 1330nm and over 1 mW at 1550nm. These are the highest power single-mode InP-based VCSELs reported in these wavelength ranges.

Citation Download Citation

Virginia M. Robbins, Steven D. Lester, David P. Bour, Jeffrey N. Miller, and Francoise Mertz "High-power single-mode 1330- and 1550-nm VCSELs bonded to silicon substrates", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); https://doi.org/10.1117/12.540323

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