Novel rinse process for reducing pattern collapse in 0.30-k1 ArF lithography

Geunsu Lee; Young Sun Hwang; Keun Do Ban; Cheol Kyu Bok; Seung Chan Moon; Ki Soo Shin

doi:10.1117/12.537193

14 May 2004 Novel rinse process for reducing pattern collapse in 0.30-k1 ArF lithography

Geunsu Lee, Young Sun Hwang, Keun Do Ban, Cheol Kyu Bok, Seung Chan Moon, Ki Soo Shin

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.537193
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

In-house rinse, HR31 has a strong point in terms of lithographic performance, defect, bubble, and metal impurity. The collapse behavior was quantified in terms of SMCD (Standing Minimum CD) in 80nm dense L/S ArF resist patterns. It contributed to enlarging process window by improving collapse (SMCD: 84→72nm), CD uniformity (12.3→9.3nm), and lithographic margin [EL (11.7→12.8%), and DOF (0.20→0.25µm)].

Citation Download Citation

Geunsu Lee, Young Sun Hwang, Keun Do Ban, Cheol Kyu Bok, Seung Chan Moon, and Ki Soo Shin "Novel rinse process for reducing pattern collapse in 0.30-k1 ArF lithography", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.537193

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