Modeling of reactive soluble ARCs and photoresist-ARC interaction

John J. Biafore; Mark Neisser; Gary dela Pena; Jeffrey D. Byers; Medhat A. Toukhy; Joseph E. Oberlander

doi:10.1117/12.536748

28 May 2004 Modeling of reactive soluble ARCs and photoresist-ARC interaction

John J. Biafore, Mark Neisser, Gary dela Pena, Jeffrey D. Byers, Medhat A. Toukhy, Joseph E. Oberlander

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.536748
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The stringent requirements facing modern chemically amplified photoresists and antireflective coatings make computer physical simulation methods a valuable tool for photoresist and ARC research and design. Hypothetical microlithographic processes involving toolsets that are unavailable to the experimenter may be evaluated. Complex photoresist physical reaction phenomena, often difficult to measure experimentally, may be evaluated within the limits of the mathematical models used. This work details the mechanics and application of a custom simulation tool written for the modeled study of reactive soluble ARCs (DBARCs), soluble ARCs, and photoresist-ARC interactions - phenomena not readily modeled by commercially available software at the time of this paper. Photoresist and ARC interactions are modeled by computing two-dimensional composite diffusion and reaction. Soluble ARCs, either reactive (DBARCs) or nonreactive, are modeled using composite diffusion, a full level-set front tracking development method and multiple development rate functions. Physical models, mathematical formulations and numerical methods of solution are shown. Scenarios hypothesizing the origin of photoresist profile foot formation are discussed and modeled. Models of reactive, soluble ARCs (DBARCs) are compared to models of constant development rate soluble ARCs. The effects of specific reactant diffusion and reaction upon DBARC dissolution rate contours are modeled.

Citation Download Citation

John J. Biafore, Mark Neisser, Gary dela Pena, Jeffrey D. Byers, Medhat A. Toukhy, and Joseph E. Oberlander "Modeling of reactive soluble ARCs and photoresist-ARC interaction", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.536748

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