Modeling for profile-based process-window metrology

Christopher P. Ausschnitt; Shaunee Y. Cheng

doi:10.1117/12.540914

29 April 2004 Modeling for profile-based process-window metrology

Christopher P. Ausschnitt, Shaunee Y. Cheng

Proceedings Volume 5378, Data Analysis and Modeling for Process Control; (2004) https://doi.org/10.1117/12.540914
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

We formulate a physical model to extract effective dose and defocus (EDD) from pattern profile data and demonstrate its efficacy in the analysis of in-line scatterometer measurements. From the measurement of a single target structure, the model enables simultaneous computation of pattern dimensions pre-calibrated to the imaging system dose and focus settings. Our approach is generally applicable to ensuring the adherence of pattern features to dimensional tolerances in the control and disposition of product wafers while minimizing in-line metrology.

Citation Download Citation

Christopher P. Ausschnitt and Shaunee Y. Cheng "Modeling for profile-based process-window metrology", Proc. SPIE 5378, Data Analysis and Modeling for Process Control, (29 April 2004); https://doi.org/10.1117/12.540914

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