Using InP/InGaAs avalanche photodiodes for 1.3 um photon detection

A. A. Anisimov; A. V. Medvedev; Sergey I. Markov

doi:10.1117/12.610518

16 February 2005 Using InP/InGaAs avalanche photodiodes for 1.3 μm photon detection

A. A. Anisimov, A. V. Medvedev, Sergey I. Markov

Proceedings Volume 5447, Lasers for Measurements and Information Transfer 2004; 54470N (2005) https://doi.org/10.1117/12.610518
Event: Lasers for Measurements and Information Transfer 2004, 2004, St. Petersburg, Russian Federation

Abstract

InGaAs/InP avalanche photodiode in photon detection mode was researched. The automatic experimental setup was developed. The parameters of single photon detector were optimized for quantum cryptography application in temperature range -38...-57C for 1.3 μm wavelength. Quantum efficiency 16% at quantum bit error rate 10% and dark count probability 7 10^-5 at -38C was achieved.

Citation Download Citation

A. A. Anisimov, A. V. Medvedev, and Sergey I. Markov "Using InP/InGaAs avalanche photodiodes for 1.3 μm photon detection", Proc. SPIE 5447, Lasers for Measurements and Information Transfer 2004, 54470N (16 February 2005); https://doi.org/10.1117/12.610518

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