Fabrication and evaluation of efficient light emitters comprising nanocluster-rich SiO2 layers

Rossen A. Yankov; Thoralf Gebel; Lars Rebohle; Thomas Trautmann; Wolfgang Skorupa; Guenter Gauglitz; Ruediger Frank

doi:10.1117/12.545402

15 September 2004 Fabrication and evaluation of efficient light emitters comprising nanocluster-rich SiO₂ layers

Rossen A. Yankov, Thoralf Gebel, Lars Rebohle, Thomas Trautmann, Wolfgang Skorupa, Guenter Gauglitz, Ruediger Frank

Proceedings Volume 5450, Photonic Crystal Materials and Nanostructures; (2004) https://doi.org/10.1117/12.545402
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

We have demonstrated the feasibility of obtaining intense blue-to-violet electroluminescence (EL) from silicon-based light-emitting structures at room temperature (RT), in line with the need for efficient and inexpensive light sources whose production is compatible with existing silicon device technology. Ion-beam synthesis (IBS) and standard silicon processing have been used to fabricate light-emitting diodes whose active medium is a layer of thermal SiO₂ containing germanium nanocrystals. Extensive research has been carried out in three main directions: optimization of the fabrication process, improvement in the device lifetime, and elucidation of the underlying mechanisms of light emission and charge injection/charge transport. This research effort has resulted in the establishment of a set of optimum conditions for the formation of improved-quality Si-based light emitters. It has been shown that the use of plasma treatement is helpful in increasing device lifetime. Issues related to the nature and the excitation of the light-emitting centers have been considered. Finally, the utility of such light-emitting devices in the development of integrated optoelectronic devices as well as Lab-on-a-Chip, microarray and sensor systems has been outlined.

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Rossen A. Yankov, Thoralf Gebel, Lars Rebohle, Thomas Trautmann, Wolfgang Skorupa, Guenter Gauglitz, and Ruediger Frank "Fabrication and evaluation of efficient light emitters comprising nanocluster-rich SiO₂ layers", Proc. SPIE 5450, Photonic Crystal Materials and Nanostructures, (15 September 2004); https://doi.org/10.1117/12.545402

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KEYWORDS

Electroluminescence

Silicon

Germanium

Oxides

Annealing

Electrodes

Light emitting diodes

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