Orienting properties of thin inorganic oxide films created by the method of reactive cathode sputtering in glow discharge plasma are demonstrated. The quality of homogeneous and twist alignment of nematic LC was evaluated by polarization microscopy methods. For comparison of orienting properties of silicon oxide films, the parameter of twist orientation quality was used, and its dependence on technological parameters of sputtering (such as cathode voltage, discharge current density, deposition angle, content of gas atmosphere) was shown. The morphologies of SiOx orienting layers deposited on substrates with different coatings are demonstrated.
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