Paper
6 December 2004 EUV mask pilot line at Intel Corporation
Author Affiliations +
Abstract
The introduction of extreme ultraviolet (EUV) lithography into high volume manufacturing requires the development of a new mask technology. In support of this, Intel Corporation has established a pilot line devoted to encountering and eliminating barriers to manufacturability of EUV masks. It concentrates on EUV-specific process modules and makes use of the captive standard photomask fabrication capability of Intel Corporation. The goal of the pilot line is to accelerate EUV mask development to intersect the 32nm technology node. This requires EUV mask technology to be comparable to standard photomask technology by the beginning of the silicon wafer process development phase for that technology node. The pilot line embodies Intel's strategy to lead EUV mask development in the areas of the mask patterning process, mask fabrication tools, the starting material (blanks) and the understanding of process interdependencies. The patterning process includes all steps from blank defect inspection through final pattern inspection and repair. We have specified and ordered the EUV-specific tools and most will be installed in 2004. We have worked with International Sematech and others to provide for the next generation of EUV-specific mask tools. Our process of record is run repeatedly to ensure its robustness. This primes the supply chain and collects information needed for blank improvement.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan R. Stivers, Pei-Yang Yan, Guojing Zhang, Ted Liang, Emily Y. Shu, Edita Tejnil, Barry Lieberman, Rajesh Nagpal, Kangmin Hsia, Michael Penn, and Fu-Chang Lo "EUV mask pilot line at Intel Corporation", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569176
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Cited by 8 scholarly publications.
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KEYWORDS
Photomasks

Extreme ultraviolet

Inspection

Extreme ultraviolet lithography

Reflectivity

Metrology

Lithography

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