EL2 deep level defects and above band gap two-photon absorption in high gain lateral semi-insulating GaAs photoconductive switch

Wei Shi; Wei Wang; Hongjian Niu; Xianbin Zhang; Weili Ji

doi:10.1117/12.577819

20 January 2005 EL2 deep level defects and above-band gap two-photon absorption in high gain lateral semi-insulating GaAs photoconductive switch

Wei Shi, Wei Wang, Hongjian Niu, Xianbin Zhang, Weili Ji

Author Affiliations +

Proceedings Volume 5633, Advanced Materials and Devices for Sensing and Imaging II; (2005) https://doi.org/10.1117/12.577819
Event: Photonics Asia, 2004, Beijing, China

Abstract

Experiments of a lateral semi-insulating GaAs photoconductive switch, both linear and nonlinear mode of the switch were observed when the switch was triggered by 1064 nm laser pulses, with energy of 1.9 mJ and the pulse width of 60 ns, and operated at biased electric field of 4.37 kV/cm. It’s wavelength is longer than 876nm, but the experiments indicate that the semi-insulating GaAs photoconductive switches can absorb 1064 nm laser obviously, which is out of the absorption range of the GaAs material. It is not possible to explain this behavior by using intrinsic absorption mechanism. We think that there are two mostly kinds of absorption mechanisms play a key part in absorption process, they are the two-steps-single-photon absorption that based on the EL2 energy level and two-photon absorption.

Citation Download Citation

Wei Shi, Wei Wang, Hongjian Niu, Xianbin Zhang, and Weili Ji "EL2 deep level defects and above-band gap two-photon absorption in high gain lateral semi-insulating GaAs photoconductive switch", Proc. SPIE 5633, Advanced Materials and Devices for Sensing and Imaging II, (20 January 2005); https://doi.org/10.1117/12.577819

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