Photodamage resistance property and application of In:LiNbO3 crystal

Caixia Liu; Xinrong Liu; Tao Zhang

doi:10.1117/12.574266

3 January 2005 Photodamage resistance property and application of In:LiNbO₃ crystal

Caixia Liu, Xinrong Liu, Tao Zhang

Proceedings Volume 5643, Advances in Optical Data Storage Technology; (2005) https://doi.org/10.1117/12.574266
Event: Photonics Asia, 2004, Beijing, China

Abstract

A series of LiNbO₃ crystals doped with different levels of In₂O₃ were grown by Czochraski method. The photo-damage threshold as well as infrared transmittance spectra and doubling frequency conversion efficient of the crystals was measured. At the same time, the shift mechanism of OH- absorption peaks in In:LiNbO₃ crystals were investigated. In the experiment of frequency doubling, it was found that the phase-matching temperature of In:LINbO₃ crystals was lower than that of Mg:LiNbO₃ and Zn:LiiNbO₃ crystals.

Citation Download Citation

Caixia Liu, Xinrong Liu, and Tao Zhang "Photodamage resistance property and application of In:LiNbO₃ crystal", Proc. SPIE 5643, Advances in Optical Data Storage Technology, (3 January 2005); https://doi.org/10.1117/12.574266

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available