Paper
21 February 2005 Excimer laser conditionning of KDP: influence of the laser parameters and crystal orientation on the laser damage threshold
David Damiani, Herve Piombini, Daniel Plessis, Thierry Donval, Laurent Lamaignere, Marc Loiseau
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Abstract
We perform thne conditioning of various KDP crystals with a XeF excimer laser working at 351 nm. We determine the maximum available excimer laser fluence for conditioning without damage initiation within the crystal. We demonstrate enhancement of the damage resistance with the increase of the cumulative excimer laser fluence. Using the conditioning parameters we show that the damage resistance is also dependent on the crystalline orientation of the KDP samples.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Damiani, Herve Piombini, Daniel Plessis, Thierry Donval, Laurent Lamaignere, and Marc Loiseau "Excimer laser conditionning of KDP: influence of the laser parameters and crystal orientation on the laser damage threshold", Proc. SPIE 5647, Laser-Induced Damage in Optical Materials: 2004, (21 February 2005); https://doi.org/10.1117/12.584707
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Cited by 5 scholarly publications.
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KEYWORDS
Excimer lasers

Laser damage threshold

Laser crystals

Crystals

Laser induced damage

Resistance

Scattering

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