Temperature dependent output characteristics of p-doped 1.1 and 1.3 µm quantum dot lasers

Z. Mi; S. Fathpour; P. Bhattacharya; A. R. Kovsh; S. S. Mikhrin; I. L. Krestnikov; A. V. Kozhukhov; N. N. Ledentsov

doi:10.1117/12.589891

28 April 2005 Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasers

Z. Mi, S. Fathpour, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, N. N. Ledentsov

Proceedings Volume 5722, Physics and Simulation of Optoelectronic Devices XIII; (2005) https://doi.org/10.1117/12.589891
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

The characteristics of p-doped 1.1 μm and 1.3 μm self-assembled In(Ga)As quantum dot lasers grown by molecular beam epitaxy have been studied. With optimum p-doping, we demonstrate quantum dot lasers with zero-temperature dependence of the threshold current (T₀ = ∞) and the output slope efficiency. These characteristics are explained through a self-consistent model that includes temperature-dependent Auger recombination in the quantum dots. With tunnel injection, we measure greatly enhanced -3dB frequency response, 25 GHz and 11 GHz in 1.1 μm and 1.3 μm tunnel injection quantum dot lasers, respectively. These devices also exhibit near zero α-parameters and extremely small chirp (< 0.2 Å), in addition to temperature insensitive operation.

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Z. Mi, S. Fathpour, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, and N. N. Ledentsov "Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasers", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.589891

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