Nonlinearity measurements of PIN photodiode based ROSA for FTTX applications

Xinzhong Wang; Chun He; Yao Li; Andy Zhou; Wei-Shin Tsay

doi:10.1117/12.605362

25 March 2005 Nonlinearity measurements of PIN photodiode based ROSA for FTTX applications

Xinzhong Wang, Chun He, Yao Li, Andy Zhou, Wei-Shin Tsay

Proceedings Volume 5729, Optoelectronic Integrated Circuits VII; (2005) https://doi.org/10.1117/12.605362
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We have designed and fabricated PIN photodiode based ROSA used for FTTX applications. The critical nonlinearity parameters of Inter-modulation Distortion (IMD) were measured by two RF modulated light sources near 1550nm wavelength channels. A cost effective measuring system with narrow pass band filter was set up and some procedures were utilized for determining the low level signals of IMD. Obtained test results were used in real time to guide packaging process to achieve best receiver performance.

Citation Download Citation

Xinzhong Wang, Chun He, Yao Li, Andy Zhou, and Wei-Shin Tsay "Nonlinearity measurements of PIN photodiode based ROSA for FTTX applications", Proc. SPIE 5729, Optoelectronic Integrated Circuits VII, (25 March 2005); https://doi.org/10.1117/12.605362

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