Paper
4 May 2005 Study of barrier coats for protection against airborne contamination in 157-nm lithography
Francis Houlihan, Raj Sakamuri, Keino Hamilton, Alla Dimerli, David Rentkiewicz, Andrew Romano, Ralph R. Dammel, Yayi Wei, Nickolay Stepanenko, Michael Sebald, Christoph Hohle, Will Conley, Daniel Miller, Toshiro Itani, Masato Shigematsu, Etsuro Kawaguchi
Author Affiliations +
Abstract
We summarize our work on devising protective barrier coats for use against airborne contamination when using tert-butoxycarbonylmethyl (BOCME) capped fluoroalcohol resist resins as part of our strategy to develop a 157 nm resist platform. We will describe how a barrier coat (AZ EXP FX Coating 145) consisting of a fluoro-cyclopolymer formulation, soluble in aqueous developer, can improve the post-exposure delay (PED) latitude of 157 nm resist resists exposed under conditions or airborne contamination. Specifically, a 20 nm thick coating of AZ EXP FX Coating 145 gives a PED latitude for L/S features of at least 10 min under condition of airborne amine contamination (10 ppb amine contamination). The barrier coat, AZ EXP FX coating 145 is formulated in a solvent which is compatible with resist film coated from typical 193 nm resist spin casting solvents. Moreover, it can be easily removed as part of the normal aqueous base development scheme, no extra post-apply bake or stripping step is required.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francis Houlihan, Raj Sakamuri, Keino Hamilton, Alla Dimerli, David Rentkiewicz, Andrew Romano, Ralph R. Dammel, Yayi Wei, Nickolay Stepanenko, Michael Sebald, Christoph Hohle, Will Conley, Daniel Miller, Toshiro Itani, Masato Shigematsu, and Etsuro Kawaguchi "Study of barrier coats for protection against airborne contamination in 157-nm lithography", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.601810
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Cited by 3 scholarly publications.
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KEYWORDS
Thin film coatings

Coating

Contamination

Scanning electron microscopy

Binary data

Photomasks

Semiconducting wafers

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