A new run-to-run control method for oxide CMP process

Jin Wang; Q. Peter He

doi:10.1117/12.599603

17 May 2005 A new run-to-run control method for oxide CMP process

Jin Wang, Q. Peter He

Proceedings Volume 5755, Data Analysis and Modeling for Process Control II; (2005) https://doi.org/10.1117/12.599603
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The main objective of the CMP run-to-run controller is to reduce the lot-to-lot variation in the post-polish oxide film thickness. Besides tool-induced variation, product-induced variation is also a significant source of variation to the CMP process. But the need to compensate for device pattern dependencies has not been addressed until recently. In this work, two removal rate models (topography factor model and sheet film equivalent model) are compared and the equivalency between them is derived. A new control method is proposed based on the sheet film equivalent model, which shows significant improvement compared to the traditional control method based on topography factor model. The performance of the proposed control algorithm is demonstrated using both simulated and industrial examples.

Citation Download Citation

Jin Wang and Q. Peter He "A new run-to-run control method for oxide CMP process", Proc. SPIE 5755, Data Analysis and Modeling for Process Control II, (17 May 2005); https://doi.org/10.1117/12.599603

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