Paper
23 May 2005 Temporal signal-to-noise ratio of a CMOS buried double junction image sensor
S. Feruglio, V. Fouad Hanna, G. Alquie, G. Vasilescu
Author Affiliations +
Proceedings Volume 5846, Noise and Information in Nanoelectronics, Sensors, and Standards III; (2005) https://doi.org/10.1117/12.608800
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States
Abstract
This paper presents an accurate temporal noise analysis of a new kind of CMOS image sensor for colour design. Operating in the charge storage mode, the noise of this APS is described with a time-varying model. During the reset phase, as the steady state is fast established, classical frequency-domain noise analysis can still be used to determine noise at both sensing nodes. Good agreement is observed between the results obtained by simulation with Cadence CAD tools of a 0.35μm-CMOS test structure and the behaviour predicted by the proposed analytical approach. During the integration phase, as both junctions are floating, the stationary state condition is never fulfilled and the noise analysis must be carried out in the time-domain. Our contribution consists in taking into account the non-linearity of the junction capacitance, which yields more realistic results. Considering only the dominant white noise component, it clearly appears that the junction non-linearity improves the output SNR for both sense nodes at high illumination and/or high integration period.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Feruglio, V. Fouad Hanna, G. Alquie, and G. Vasilescu "Temporal signal-to-noise ratio of a CMOS buried double junction image sensor", Proc. SPIE 5846, Noise and Information in Nanoelectronics, Sensors, and Standards III, (23 May 2005); https://doi.org/10.1117/12.608800
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Signal to noise ratio

Image sensors

Computer aided design

Capacitance

CMOS sensors

Nanoelectronics

Sensors

RELATED CONTENT

OpenLMD, multimodal monitoring and control of LMD processing
Proceedings of SPIE (February 22 2017)
Information measures for object recognition
Proceedings of SPIE (September 15 1998)
Design of wide field and high resolution video lens
Proceedings of SPIE (November 20 2009)
High-sensitivity high-dynamic digital CMOS imager
Proceedings of SPIE (May 15 2001)
A low noise wide dynamic range CMOS image sensor with...
Proceedings of SPIE (February 29 2008)

Back to Top