In-line characterization of silicon nano-crystals grown on high-K tunnel dielectrics

E. Nolot; P. Mur; S. Favier

doi:10.1117/12.616820

31 August 2005 In-line characterization of silicon nano-crystals grown on high-K tunnel dielectrics

E. Nolot, P. Mur, S. Favier

Proceedings Volume 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II; 587805 (2005) https://doi.org/10.1117/12.616820
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

The development of silicon nano-crystals (nc-Si or dots) technologies requires important characterization work, and till now suffers from the lack of non-invasive, in-line metrology to control the growth of dots. This paper reports the validation of a new in-line dots size and density characterization, achieved by coupling light scattering analysis and XRay reflectivity measurements. A set of nc-Si with density ranging from 10¹¹ to 6x10¹¹cm^-2 and size from 9 to 13nm was grown on Al₂O₃ / HfO₂ stacks and used to validate the correlation between light scattering and dot density, and the correlation between X-Ray reflectivity and dot size. This fast (<10 minutes per wafer) in-line protocol gives very encouraging results, being in good agreement with Scanning Electron Microscopy off-line measurements.

Citation Download Citation

E. Nolot, P. Mur, and S. Favier "In-line characterization of silicon nano-crystals grown on high-K tunnel dielectrics", Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 587805 (31 August 2005); https://doi.org/10.1117/12.616820

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