Observation of crystallization in amorphous phase change films induced by femtosecond laser pulses

Guangjun Zhang; Donghong Gu; Xiongwei Jiang; Qingxi Chen; Fuxi Gan

doi:10.1117/12.649663

15 September 2005 Observation of crystallization in amorphous phase change films induced by femtosecond laser pulses

Guangjun Zhang, Donghong Gu, Xiongwei Jiang, Qingxi Chen, Fuxi Gan

Proceedings Volume 5966, Seventh International Symposium on Optical Storage (ISOS 2005); 59661D (2005) https://doi.org/10.1117/12.649663
Event: Seventh International Symposium on Optical Storage (ISOS 2005), 2005, Zhanjiang, China

Abstract

Crystallization was induced in amorphous Ge₂Sb₂Te₅ and AgInSbTe films by femtosecond laser with an average power of 20mW at a frequency of 1 kHz and a pulsed width of 120 fs. Transmission electron microscopy observes the morphology of Ge₂Sb₂Te₅and AgInSbTe films before and after irradiation of femtosecond laser pulses and confirms the existence of crystalline state.

Citation Download Citation

Guangjun Zhang, Donghong Gu, Xiongwei Jiang, Qingxi Chen, and Fuxi Gan "Observation of crystallization in amorphous phase change films induced by femtosecond laser pulses", Proc. SPIE 5966, Seventh International Symposium on Optical Storage (ISOS 2005), 59661D (15 September 2005); https://doi.org/10.1117/12.649663

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