CdTe:Ge/Si (100) thin films grown by pulsed laser deposition (PLD) for photonic devices

S. Neretina; R. A. Hughes; J. S. Preston; N. V. Sochinskii; P. Mascher

doi:10.1117/12.627883

12 October 2005 CdTe:Ge/Si (100) thin films grown by pulsed laser deposition (PLD) for photonic devices

S. Neretina, R. A. Hughes, J. S. Preston, N. V. Sochinskii, P. Mascher

Proceedings Volume 5970, Photonic Applications in Devices and Communication Systems; 59700Y (2005) https://doi.org/10.1117/12.627883
Event: Photonics North, 2005, Toronto, Canada

Abstract

Cadmium Telluride (CdTe) is a well known photonic material in the fields of infrared imaging and solar cells. Its nonlinear optical properties also make it a promising candidate for novel telecom applications that would utilize its high Kerr coefficient to produce advanced logical devices such as switches, routers and wavelength converters. The large photorefractive effect observed in CdTe also makes possible high-speed devices suitable for optical data processing. In order to advance such photorefractive waveguide applications, we have deposited CdTe films on silicon substrates with a native oxide layer using the pulsed laser deposition technique (PLD). Silicon was chosen as the substrate material as it is suitable for the monolithic integration of logical devices. Maintaining an oxide layer was deemed necessary as a high refractive index mismatch is desirable for high-index contrast waveguide based applications and such an index mismatch could be provided by a reasonably thick layer of SiO₂. Films exhibiting some structural deficiencies, but with high optical quality were deposited through the optimization of the growth parameters. X-ray diffraction data indicates that the films are [111] oriented with rocking curves of substantial width. Atomic force microscopy images confirm that the films have a smooth surface morphology as was suggested by their mirror-like appearance. Using the optimum growth conditions, CdTe films doped with germanium were also deposited as this dopant introduces deep donor levels that enhance the photorefractive effect. A comparison of the optical properties obtained from the doped and undoped films indicate that impurities can have a marked effect on the index of refraction and extinction coefficient. Such alterations to the optical constants must be considered in the design of waveguide structures.

Citation Download Citation

S. Neretina, R. A. Hughes, J. S. Preston, N. V. Sochinskii, and P. Mascher "CdTe:Ge/Si (100) thin films grown by pulsed laser deposition (PLD) for photonic devices", Proc. SPIE 5970, Photonic Applications in Devices and Communication Systems, 59700Y (12 October 2005); https://doi.org/10.1117/12.627883

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KEYWORDS

Silicon

Oxides

Silicon films

Germanium

Waveguides

Optical properties

Refractive index

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