Paper
14 December 2005 The model of EDFA parameters in the high-power limit
Florentin Vasile, Paul Schiopu
Author Affiliations +
Proceedings Volume 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II; 597211 (2005) https://doi.org/10.1117/12.639758
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 2004, Bucharest, Romania
Abstract
In this paper we present one model for parameters used in EDFA (Erbium Doped Fiber Amplifier) in the case of high- power limit. We use for this model the absorption and emission cross-sections as a function of wavelength. In this model we use the fraction of Er3+ ions in the excited state as a function of wavelength for high-power limit. In addition, we present and compare these characteristics for different erbium-doped glasses in the case of EDFA. The results obtained here can be used to evaluate and to determine the characteristics for noise figure and for gain in the case of EDFA.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Florentin Vasile and Paul Schiopu "The model of EDFA parameters in the high-power limit", Proc. SPIE 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 597211 (14 December 2005); https://doi.org/10.1117/12.639758
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Optical amplifiers

Absorption

Optical networks

Glasses

Erbium

Ions

Telecommunications

RELATED CONTENT


Back to Top