980-nm high power vertical external-cavity surface-emitting semiconductor lasers (VECSEL)

Guo-guang Lu; Chun-feng He; Xiao-nan Shan; Te Li; Yan-fang Sun; Li Qin; Chang-ling Yan; Yong-qiang Ning; Li-jun Wang

doi:10.1117/12.635713

1 December 2005 980-nm high-power vertical external-cavity surface-emitting semiconductor lasers (VECSEL)

Guo-guang Lu, Chun-feng He, Xiao-nan Shan, Te Li, Yan-fang Sun, Li Qin, Chang-ling Yan, Yong-qiang Ning, Li-jun Wang

Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602003 (2005) https://doi.org/10.1117/12.635713
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

We describe the design, fabrication, and calculation characteristics of the 980nm high-power diode-pumped vertical external-cavity surface-emitting laser(VECSEL).From our calculation, the VECSEL with active region of InGaAs/GaAsP/AlGaAs system can operate near 1w in a single transverse mode.

Citation Download Citation

Guo-guang Lu, Chun-feng He, Xiao-nan Shan, Te Li, Yan-fang Sun, Li Qin, Chang-ling Yan, Yong-qiang Ning, and Li-jun Wang "980-nm high-power vertical external-cavity surface-emitting semiconductor lasers (VECSEL)", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602003 (1 December 2005); https://doi.org/10.1117/12.635713

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available