Paper
21 December 2005 High-power diode-end-pumped intracavity frequency-doubled Nd:GdVO4/LBO red laser
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Proceedings Volume 6028, ICO20: Lasers and Laser Technologies; 60280D (2005) https://doi.org/10.1117/12.667127
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
We report a high-power diode-single-end-pumped continuous-wave and Q-switched Nd:GdVO4 red laser through intracavity frequency-doubling with a type-I critical phase-matched LBO crystal. The maximum CW output power at 671 nm was measured to be 2.1 W at the incident pump power of 30 W, with the corresponding optical conversion efficiency of 7%. At the repetition frequency of 47 kHz, the maximum average output power of quasi-CW red light was obtained to be 6 W, with the corresponding optical conversion efficiency of 12.8% and the pulse width of about 97 ns. At the average output power around 5 W, the power stability was better than 5.8% for one hour. The M2 factor increased from 1.33 to 2.47 when the output power was increased from 1 W to 6 W. At the repetition rate of 25 kHz, the maximum pulse energy of 212 μJ was obtained with the corresponding peak power of 3.98 kW.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chenlin Du, Shuangchen Ruan, Yongqin Yu, and Feng Zeng "High-power diode-end-pumped intracavity frequency-doubled Nd:GdVO4/LBO red laser", Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60280D (21 December 2005); https://doi.org/10.1117/12.667127
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KEYWORDS
Crystals

Laser crystals

Semiconductor lasers

High power lasers

Continuous wave operation

Second-harmonic generation

Mirrors

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