Estimation of pattern shape based on CD-SEM image by using MPPC method

T. Onozuka; Y. Ojima; J. Meessen; B. Rijpers

doi:10.1117/12.655987

24 March 2006 Estimation of pattern shape based on CD-SEM image by using MPPC method

T. Onozuka, Y. Ojima, J. Meessen, B. Rijpers

Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61521D (2006) https://doi.org/10.1117/12.655987
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

This study demonstrates the MPPC (Multiple Parameters Profile Characterization) measurement method utilizing ArF photo resist patterns. MPPC is a technique for estimating the three dimensional profile of patterns which are imaged and measured on the CD-SEM (critical dimension scanning electron microscope). MPPC utilizes the secondary electron signal to calculate several indices including top CD, peak CD, top rounding, bottom footing, etc. This primary focused of this study is to understand the variations in pattern profile caused by changes in exposure condition. The results demonstrate the ability to extract pattern profile shape information by MPPC measurement that could not otherwise be detected by a conventional bottom CD measurement method. Furthermore, the results were compared to cross sectional images collected by STEM (scanning transmission electron microscope) to verify the accuracy of the MPPC technique. The peak CD results accurately estimate the pattern width when the sidewall angle of the feature is nearly vertical. Additionally, line edge roughness (LER) caused by pattern profile variations was evaluated utilizing MPPC. The results suggest that MPPC may be utilized to evaluate the roughness over the entire profile.

Citation Download Citation

T. Onozuka, Y. Ojima, J. Meessen, and B. Rijpers "Estimation of pattern shape based on CD-SEM image by using MPPC method", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61521D (24 March 2006); https://doi.org/10.1117/12.655987

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