a-Si:H Image Sensor: Some Aspects of Physics and Performance

K. Kempter

doi:10.1117/12.961081

12 March 1986 a-Si:H Image Sensor: Some Aspects of Physics and Performance

K. Kempter

Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961081
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

A review is given of some aspects of a large-format image sensor which combines an a-Si:H thin-film sensor array with microelectronic chips for readout, interconnected on one substrate. Comparisons are made between the different thin-film photoconductor materials, the various noninjecting contacts for the sensor photodiodes and the circuits for readout as they have been proposed so far. A-Si:H is found to be a superior material for the sensors; however, the readout circuit must be carefully designed to obtain a satisfactory signal at the sensor output.

Citation Download Citation

K. Kempter "a-Si:H Image Sensor: Some Aspects of Physics and Performance", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961081

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available