Paper
20 January 1976 Advanced (Hg,Cd)Te Photodiodes For Infrared Applications
Toivo Koehler, Alice M. Chiang
Author Affiliations +
Abstract
This paper discusses four types of (Hg,Cd)Te photodiodes developed recently at the Honeywell Radiation Center: 1. 2.06μm (Hg,Cd)Te avalanche photodiodes 2. 10.64m (Hg,Cd)Te photodiodes 3. High D* 10.6μm photodiodes with RoA products of 0.7 ohm-cm2 4. Thermoelectrically cooled 10.64m photomixers The 2.064m avalanche photodiodes were developed for the Q-switched Ho:YLF laser. The structures exhibited avalanche gains from 9 to 36. The 10.6μm photodiodes have average quantum efficiencies of 30 percent. This program has produced 5 element linear arrays with 250μm x 250μm elements, 17μm spacing and 350 MHz bandwidth. RoA products as high as 0.7 ohm-cm2 have also recently become possible in 10.64m (Hg,Cd)Te photodiodes. 10.6μm diodes operating at 170°K with a 6-stage thermoelectric cooler have high quantum efficiency (20%) and moderate D* and are suitable for direct detection or heterodyne applications requiring 100 MHz bandwidth.
© (1976) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toivo Koehler and Alice M. Chiang "Advanced (Hg,Cd)Te Photodiodes For Infrared Applications", Proc. SPIE 0062, Modern Utilization of Infrared Technology I, (20 January 1976); https://doi.org/10.1117/12.954431
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Cited by 3 scholarly publications.
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KEYWORDS
Photodiodes

Quantum efficiency

Heterodyning

Sensors

Diodes

Thermoelectric materials

Avalanche photodiodes

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