Modeling and characterization of GaN <i>p-i-n</i> photodiodes

Jie Deng; Subrata Halder; James C. M. Hwang; Brian Hertog; Junqing Xie; Amir Dabiran; Andrei Osinsky

doi:10.1117/12.682087

7 September 2006 Modeling and characterization of GaN p-i-n photodiodes

Jie Deng, Subrata Halder, James C. M. Hwang, Brian Hertog, Junqing Xie, Amir Dabiran, Andrei Osinsky

Proceedings Volume 6294, Infrared and Photoelectronic Imagers and Detector Devices II; 62940N (2006) https://doi.org/10.1117/12.682087
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

This paper reports temperature-dependent DC and small-signal RF characteristics of a 0.4-mm-radius sapphire-based GaN p-i-n diode between -60°C and 175°C. Deep levels approximately 1 eV below the conduction band were observed in both persistent photo-conductance and photo-capacitance measurements. Self-heating effects were also observed and modeled with the measured thermal resistance and time constant. Based on these characteristics, an equivalent-circuit model was constructed, which accurately predicted the temperature-dependent DC and RF characteristics of the diode.

Citation Download Citation

Jie Deng, Subrata Halder, James C. M. Hwang, Brian Hertog, Junqing Xie, Amir Dabiran, and Andrei Osinsky "Modeling and characterization of GaN p-i-n photodiodes", Proc. SPIE 6294, Infrared and Photoelectronic Imagers and Detector Devices II, 62940N (7 September 2006); https://doi.org/10.1117/12.682087

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