Surface morphology and stress analysis of piezoelectric strontium-doped lead zirconate titanate thin films

Sharath Sriram; Madhu Bhaskaran; Anthony S. Holland

doi:10.1117/12.695941

20 December 2006 Surface morphology and stress analysis of piezoelectric strontium-doped lead zirconate titanate thin films

Sharath Sriram, Madhu Bhaskaran, Anthony S. Holland

Author Affiliations +

Proceedings Volume 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III; 64150J (2006) https://doi.org/10.1117/12.695941
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2006, Adelaide, Australia

Abstract

Strontium-doped lead zirconate titanate (PSZT) is a piezoelectric ceramic with relatively high values of piezoelectric coefficients. Perovskite oriented PSZT thin films are also reported to exhibit a variety of other properties including ferroelectricity and pyroelectricity. This paper reports on a study of the surface morphology and resulting stress of PSZT thin films, deposited under a variety of RF magnetron sputtering conditions. The study compares PSZT thin films deposited on metal (gold and platinum) coated silicon wafers. The surface morphology of the deposited PSZT thin films was studied using Atomic Force Microscopy (AFM). Grain size and average surface roughness measurements were used to study the quality of the films. The thin film stress was determined using the changes in the radius of curvature of the sample due to an added layer of thin film, and by applying Stoney's equation to relate the stress to the radius of curvature. The variations in the level of stress for different thermodynamic conditions during RF magnetron sputter deposition are also reported.

Citation Download Citation

Sharath Sriram, Madhu Bhaskaran, and Anthony S. Holland "Surface morphology and stress analysis of piezoelectric strontium-doped lead zirconate titanate thin films", Proc. SPIE 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III, 64150J (20 December 2006); https://doi.org/10.1117/12.695941

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