Feasibility Study of 45nm Metal Patterning with 0.93 NA

Yung Feng Cheng; Yueh Lin Chou; Ya Ching Hou; Bo Jou Lu; Chuen Huei Yang

doi:10.1117/12.711367

27 March 2007 Feasibility study of 45nm metal patterning with 0.93 NA

Yung Feng Cheng, Yueh Lin Chou, Ya Ching Hou, Bo Jou Lu, Chuen Huei Yang

Proceedings Volume 6520, Optical Microlithography XX; 65204J (2007) https://doi.org/10.1117/12.711367
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

As semiconductor process technology moves to 65nm and beyond, RET (resolution enhancement technology) becomes more and more important, especially in low k1 processes, where it is used frequently. Currently, in the 65nm generation, the k1 is ~0.4 on a 0.85 NA exposure tool. However, the NA improvement of the exposure tool cannot meet the schedule of generation movement very well. Low k1 technology must be applied on next generation processes. For the 45nm generation, a 0.93 NA exposure tool is available currently and is used to achieve the production criteria. Because the k1 value is quite low (~0.31), using traditional methods cannot satisfy process requirements. For metal layers of the 45nm generation, 55nm photo-resist CD (critical dimension) patterning of 130nm pitch is a difficult goal on a 0.93 NA exposure tool. Traditional OAI (off-axis-llumination) (annular mode) cannot provide enough image contrast for pattern printing. Customization of illumination mode is an approach on low k1 processes. Another one is utilizing light source polarization to achieve resolution improvement. In this paper, we introduce different approaches on 45nm metal patterning. The RET approach (C-quad. illumination mode with polarization) can provide enough image contrast in pattern printing to solve process issues.

Citation Download Citation

Yung Feng Cheng, Yueh Lin Chou, Ya Ching Hou, Bo Jou Lu, and Chuen Huei Yang "Feasibility study of 45nm metal patterning with 0.93 NA", Proc. SPIE 6520, Optical Microlithography XX, 65204J (27 March 2007); https://doi.org/10.1117/12.711367

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