Alloying Effects On Hg1-xCdxTe Electronic Structure

F Raymond

doi:10.1117/12.938533

22 November 1986 Alloying Effects On Hg_1-xCd_xTe Electronic Structure

F Raymond

Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938533
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

The electronic properties of Hg_1-xCd_xTe (MCT) are analysed within the theoretical frame given by ETBM band structure calculation method. Properties emphasized are those of interest for device application i.e. band gap bowings and the variation of electronic properties throughout the composition range. A special attention is focused on inter-valence band optical transitions and on resonant Auger processes.

Citation Download Citation

F Raymond "Alloying Effects On Hg_1-xCd_xTe Electronic Structure", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938533

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