Continuous-wave operation of photonic band-edge laser at 1.55 µm on silicon wafer

G. Vecchi; F. Raineri; I. Sagnes; A. M. Yacomotti; P. Monnier; R. Braive; S. Bouchoule; A. Levenson; R. Raj

doi:10.1117/12.724170

12 June 2007 Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer

G. Vecchi, F. Raineri, I. Sagnes, A. M. Yacomotti, P. Monnier, R. Braive, S. Bouchoule, A. Levenson, R. Raj

Proceedings Volume 6593, Photonic Materials, Devices, and Applications II; 659322 (2007) https://doi.org/10.1117/12.724170
Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, Spain

Abstract

We present continuous-wave laser operation at room temperature at 1.55 μm by optically pumping a photonic crystal structure containing an InGaAs/InP quantum well active layer. The active layer is integrated onto a Silicon chip by means of Au/In bonding technology. This metallic layer provides the reduction of heating by thermal dissipation into the substrate, and increases the quality-factor by reducing the radiative losses.

Citation Download Citation

G. Vecchi, F. Raineri, I. Sagnes, A. M. Yacomotti, P. Monnier, R. Braive, S. Bouchoule, A. Levenson, and R. Raj "Continuous-wave operation of photonic band-edge laser at 1.55 μm on silicon wafer", Proc. SPIE 6593, Photonic Materials, Devices, and Applications II, 659322 (12 June 2007); https://doi.org/10.1117/12.724170

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