Paper
11 June 2007 Noise spectroscopy of new silicon solar cells with double-sided texture
Zdeněk Chobola, Vlasta Juránková, Jiří Vaněk, Radim Bařinka
Author Affiliations +
Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66001M (2007) https://doi.org/10.1117/12.724624
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy
Abstract
This paper is intended to present the results of our experimental study of three new types of silicon solar cells G1, G3 and G5. The study is based on an analysis of the device transport and noise characteristics. This analysis shows that better quality (lower voltage noise spectral density) is exhibited by the structure of the groups of G3 specimens, this junction (of a thickness of about 1 um) is etched away from the rear side.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zdeněk Chobola, Vlasta Juránková, Jiří Vaněk, and Radim Bařinka "Noise spectroscopy of new silicon solar cells with double-sided texture", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66001M (11 June 2007); https://doi.org/10.1117/12.724624
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KEYWORDS
Silicon

Solar cells

Reliability

Resistance

Silicon solar cells

Diffusion

Semiconducting wafers

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