High mobility solution-processed n-channel organic thin film transistors

He Yan; Shaofeng Lu; Yan Zheng; Philippe Inagaki; Antonio Facchetti; Tobin J. Marks

doi:10.1117/12.733185

13 September 2007 High mobility solution-processed n-channel organic thin film transistors

He Yan, Shaofeng Lu, Yan Zheng, Philippe Inagaki, Antonio Facchetti, Tobin J. Marks

Proceedings Volume 6658, Organic Field-Effect Transistors VI; 66580S (2007) https://doi.org/10.1117/12.733185
Event: Photonic Devices + Applications, 2007, San Diego, California, United States

Abstract

N-channel organic thin-film transistors (OTFTs) based on N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10- bis(dicarboximide) (PDI8-CN₂) were fabricated using different semiconductor film deposition methods, dielectric materials, and device structures. It was found that top -contact OTFTs fabricated on Si-SiO₂ substrates with drop-cast or vapor deposited films afford comparable electron mobilities (0.01-0.1 cm²/Vs), much larger than those based on spin-coated PDI8-CN₂ films (0.001 cm²/Vs). Furthermore, n-channel top-contact TFTs were fabricated using solution-processed PDI8-CN₂ films and a UV-curable solution-processed polymeric dielectric. These devices exhibit typical gate leakage currents < 1nA for V_gate > 100V, which are negligible compared to the corresponding source/drain currents (> 0.1mA). OTFTs tested in ambient exhibit electron mobilities as high as 0.05-0.2 cm²/Vs and I_on:I_off ~ 10⁵. Furthermore, I_source-drain-V_gate hysterisis is negligible when the OTFTs were tested in both bias directions at different V_gate scan rates, demonstrating excellent insulator-semiconductor interfacial properties. Bottom-contact TFTs exhibit typical lower performance (~ ×0.1)compared to the top-contact structure. All of the devices stored in air for several months exhibit no degradation of the device characteristics.

Citation Download Citation

He Yan, Shaofeng Lu, Yan Zheng, Philippe Inagaki, Antonio Facchetti, and Tobin J. Marks "High mobility solution-processed n-channel organic thin film transistors", Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580S (13 September 2007); https://doi.org/10.1117/12.733185

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